Characteristic Temperature of a 2 µm InGaSb/AlGaAsSb Mode-locked Quantum Well Laser ![open site](/images/external.gif)
Date: Mar 26, 2018
![Characteristic Temperature of a 2 µm InGaSb/AlGaAsSb Mode-locked Quantum Well Laser](https://www.osapublishing.org/images/conference-thumb.jpg)
Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.